We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
IPB039N10N3GXT DISTI # IPB039N10N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
IPB039N10N3GATMA1 DISTI # 47W3465 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 0 |
|
IPB039N10N3 G DISTI # 726-IPB039N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant | 37 |
|
IPB039N10N3GATMA1 DISTI # 726-IPB039N10N3GATMA | Infineon Technologies AG | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant | 31 |
|
IPB039N10N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA RoHS: Compliant | 21 |
|
IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant | 0 |
|
IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant | 10 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: LTC6102HMS8#PBF OMO.#: OMO-LTC6102HMS8-PBF |
Current Sense Amplifiers Prec Zero Drift C Sense Amp | |
Mfr.#: 1SMB5924BT3G OMO.#: OMO-1SMB5924BT3G |
Zener Diodes 9.1V 3W | |
Mfr.#: STM32L476RGT6 OMO.#: OMO-STM32L476RGT6 |
ARM Microcontrollers - MCU 16/32-BITS MICROS | |
Mfr.#: STM32L496VGT3 OMO.#: OMO-STM32L496VGT3 |
ARM Microcontrollers - MCU 16/32-BITS MICROS | |
Mfr.#: C3216JB1E226M160AB OMO.#: OMO-C3216JB1E226M160AB |
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 25V 22uF JB 20% T: 1.6mm | |
Mfr.#: AD8603AUJZ-R2 |
Precision Amplifiers MicroPwr RRIO Low Noise Prec SGL CMOS | |
Mfr.#: 1SMB5924BT3G |
Zener Diodes 9.1V 3W | |
Mfr.#: STM32L476RGT6 |
IC MCU 32BIT 1MB FLASH 64LQFP | |
Mfr.#: LPS22HBTR |
MEMS NANO PRESSURE SENSOR: 260-1 | |
Mfr.#: LSHM-140-04.0-L-DV-A-S-K-TR |
0.50MM TERMINAL/SOCKET COMBO |