IPB180N04S4-0

IPB180N04S4-01 vs IPB180N04S4-00 vs IPB180N04S4-00 (4N0400)

 
PartNumberIPB180N04S4-01IPB180N04S4-00IPB180N04S4-00 (4N0400)
DescriptionMOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7TO-263-7-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current180 A180 A-
Rds On Drain Source Resistance1.3 mOhms800 uOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge135 nC286 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation188 W300 W-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS-T2OptiMOS-T2-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time41 ns58 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns24 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time38 ns67 ns-
Typical Turn On Delay Time35 ns53 ns-
Part # AliasesIPB180N04S401ATMA1 IPB18N4S41XT SP000705694IPB180N04S400ATMA1 IPB18N4S4XT SP000646176-
Unit Weight0.056438 oz0.056438 oz-
Vgs th Gate Source Threshold Voltage-2 V-
Channel Mode-Enhancement-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB180N04S4-01 MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
IPB180N04S4-00 MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
IPB180N04S4-00 Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263
IPB180N04S4-00 (4N0400) New and Original
IPB180N04S4-01 Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263
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