| PartNumber | IPB65R660CFDA | IPB65R420CFDATMA1 | IPB65R600C6ATMA1 |
| Description | MOSFET N-Ch 650V 6A D2PAK-2 | MOSFET LOW POWER_LEGACY | MOSFET N-CH 650V 7.3A TO263 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 594 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 62.5 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Series | CoolMOS | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | IPB65R660CFDAATMA1 IPB65R66CFDAXT SP000875794 | IPB65R420CFDATMA1 SP000890680 | - |
| Unit Weight | 0.077603 oz | 0.139332 oz | - |
| Tradename | - | CoolMOS | - |
| Height | - | 4.4 mm | - |
| Length | - | 10 mm | - |
| Width | - | 9.25 mm | - |