IPB60R380C

IPB60R380C6 vs IPB60R380C6 . vs IPB60R380C6 (6R380C6)

 
PartNumberIPB60R380C6IPB60R380C6 .IPB60R380C6 (6R380C6)
DescriptionMOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current10.6 A--
Rds On Drain Source Resistance340 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge32 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation83 W--
ConfigurationSingle--
TradenameCoolMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesCoolMOS C6--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time110 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPB60R380C6ATMA1 IPB6R38C6XT SP000660634--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB60R380C6 MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6
IPB60R380C6ATMA1 MOSFET N-CH 600V 10.6A TO263
Infineon Technologies
Infineon Technologies
IPB60R380C6ATMA1 MOSFET LOW POWER_LEGACY
IPB60R380C6 MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6
IPB60R380C6 . New and Original
IPB60R380C6 (6R380C6) New and Original
IPB60R380C6S New and Original
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