 |  |  | |
| PartNumber | IPB80N04S2H4ATMA2 | IPB80N04S2H4ATMA1 | IPB80N04S2H4 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-CH 40V 80A TO263-3 | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 3.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 103 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 22 ns | - | 22 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 63 ns | - | 63 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 46 ns | - | 46 ns |
| Typical Turn On Delay Time | 23 ns | - | 23 ns |
| Part # Aliases | IPB80N04S2-H4 SP001058130 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Package Case | - | - | TO-263-3 |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 3.2 mOhms |
| Qg Gate Charge | - | - | 103 nC |
| Forward Transconductance Min | - | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB80N04S2H4ATMA2 | MOSFET N-CHANNEL_30/40V | |
| IPB80N04S2H4ATMA1 | MOSFET N-CH 40V 80A TO263-3 | ||
| IPB80N04S2H4ATMA2 | MOSFET N-CHANNEL_30/40V | ||
| IPB80N04S2H4 | New and Original |