 | |  | |
| PartNumber | IPB80N06S2L06ATMA2 | IPB80N06S2L05ATMA1 | IPB80N06S2L06ATMA1 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | MOSFET N-CH 55V 80A TO263-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPB80N06S2L-06 SP001067880 | IPB80N06S2L-05 IPB80N06S2L05XT SP000219004 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| RoHS | - | Y | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Id Continuous Drain Current | - | 80 A | - |
| Rds On Drain Source Resistance | - | 3.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 230 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 300 W | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | OptiMOS | - |
| Fall Time | - | 90 ns | - |
| Rise Time | - | 93 ns | - |
| Typical Turn Off Delay Time | - | 67 ns | - |
| Typical Turn On Delay Time | - | 19 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB80N06S2L07ATMA3 | MOSFET N-CHANNEL_55/60V | |
| IPB80N06S2L09ATMA2 | MOSFET N-CHANNEL_55/60V | ||
| IPB80N06S2L06ATMA2 | MOSFET N-CHANNEL_55/60V | ||
| IPB80N06S2L07ATMA3 | MOSFET N-CH 55V 80A TO263-3 | ||
| IPB80N06S2L06ATMA2 | MOSFET N-CH 55V 80A TO263-3 | ||
| IPB80N06S2L09ATMA2 | MOSFET N-CH 55V 80A TO263-3 | ||
| IPB80N06S2L06ATMA1 | MOSFET N-CH 55V 80A TO263-3 | ||
| IPB80N06S2L09ATMA1 | MOSFET N-CH 55V 80A TO263-3 | ||
| IPB80N06S2L05ATMA1 | MOSFET N-CH 55V 80A TO263-3 | ||
| IPB80N06S2L07ATMA1 | MOSFET N-CH 55V 80A TO263-3 | ||
Infineon Technologies |
IPB80N06S2L09ATMA1 | MOSFET N-CHANNEL_55/60V | |
| IPB80N06S2L05ATMA1 | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | ||
| IPB80N06S2L07ATMA1 | MOSFET N-CHANNEL_55/60V | ||
| IPB80N06S2L05XT | New and Original | ||
| IPB80N06S2L06 | N-CH 55V 80A 6mOhm TO263-3 |