PartNumber | IPD03N03LB G | IPD03N03LA G | IPD038N06N3GATMA1 |
Description | MOSFET N-Ch 30V 90A DPAK-2 | MOSFET N-Ch 25V 90A DPAK-2 | MOSFET MV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 25 V | - |
Id Continuous Drain Current | 90 A | 90 A | - |
Rds On Drain Source Resistance | 4.9 mOhms | 5.1 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 115 W | 115 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 120 S / 60 S | 113 S / 56 S | - |
Fall Time | 6.2 ns | 6.6 ns | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9 ns | 10 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 41 ns | 42 ns | - |
Typical Turn On Delay Time | 13 ns | 13 ns | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Tradename | - | - | OptiMOS |
Part # Aliases | - | - | G IPD038N06N3 IPD38N6N3GXT SP000397994 |