PartNumber | IPD30N08S222ATMA1 | IPD30N08S2-22 | IPD30N06S4L23ATMA2 |
Description | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Id Continuous Drain Current | 30 A | 30 A | - |
Rds On Drain Source Resistance | 17.4 mOhms | 17.4 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 57 nC | 57 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 136 W | 136 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 20 ns | 20 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 30 ns | 30 ns | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | 33 ns | - |
Typical Turn On Delay Time | 13 ns | 13 ns | - |
Part # Aliases | IPD30N08S2-22 IPD3N8S222XT SP000252169 | IPD30N08S222ATMA1 IPD3N8S222XT SP000252169 | IPD30N06S4L-23 IPD3N6S4L23XT SP001028638 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Series | - | - | IPD30N06 |