PartNumber | IPD60R170CFD7ATMA1 | IPD60R145CFD7ATMA1 | IPD60R180C7ATMA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 14 A | 16 A | 13 A |
Rds On Drain Source Resistance | 144 mOhms | 145 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | 3 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 28 nC | 31 nC | 24 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 76 W | 83 W | 68 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Reel | Reel | Reel |
Series | CoolMOS CFD7 | - | CoolMOS C7 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 9 ns | 7.2 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 18 ns | 7 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 68 ns | 71 ns | 50 ns |
Typical Turn On Delay Time | 31 ns | 27 ns | 9.3 ns |
Part # Aliases | IPD60R170CFD7 SP001617934 | IPD60R145CFD7 SP001715664 | IPD60R180C7 SP001277630 |
Height | - | - | 2.3 mm |
Length | - | - | 6.5 mm |
Width | - | - | 6.22 mm |
Unit Weight | - | - | 0.139332 oz |