IPD60R380C stock, IPD60R380C, IPD60R380C6


PartNumber	IPD60R380C6	IPD60R380C6ATMA1
Description	MOSFET N-Ch 600V 10.6A DPAK-2	MOSFET N-Ch 600V 10.6A DPAK-2
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	PG-TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V
Id Continuous Drain Current	10.6 A	10.6 A
Rds On Drain Source Resistance	380 mOhms	340 mOhms
Vgs th Gate Source Threshold Voltage	2.5 V	2.5 V
Vgs Gate Source Voltage	10 V	20 V
Qg Gate Charge	32 nC	32 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	83 W	83 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	CoolMOS	CoolMOS
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	XPD60R380	CoolMOS C6
Transistor Type	1 N-Channel	1 N-Channel
Type	600 V CoolMOS C6 Power Transistor	-
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Fall Time	9 ns	9 ns
Product Type	MOSFET	MOSFET
Rise Time	10 ns	10 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	110 ns	110 ns
Typical Turn On Delay Time	15 ns	15 ns
Part # Aliases	IPD60R380C6ATMA1 SP001117716	IPD60R380C6 SP001117716
Unit Weight	0.139332 oz	0.139332 oz

Search Part Number : "IPD60R380C", Match & Start with "IPD60R380C" - Total : 8

Manufacturer	Part #	Description
Infineon Technologies	IPD60R380C6	MOSFET N-Ch 600V 10.6A DPAK-2
	IPD60R380C6ATMA1	MOSFET N-Ch 600V 10.6A DPAK-2
	IPD60R380C6	IGBT Transistors MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6
	IPD60R380C6ATMA1	RF Bipolar Transistors MOSFET N-Ch 600V 10.6A DPAK-2
	IPD60R380C6ATMA1-CUT TAPE	New and Original
	IPD60R380C6 6R380C6	New and Original
	IPD60R380C6BTMA1	MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6
	IPD60R380C6,6R6380	New and Original

IPD60R380C