IPG20N06S4L1

IPG20N06S4L11AATMA1 vs IPG20N06S4L11ATMA2 vs IPG20N06S4L11ATMA1

 
PartNumberIPG20N06S4L11AATMA1IPG20N06S4L11ATMA2IPG20N06S4L11ATMA1
DescriptionMOSFET N-CHANNEL_55/60VMOSFETMOSFET N-CHANNEL_55/60V
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTDSON-8-TDSON-8
Number of Channels2 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance15.8 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge53 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation65 W--
ConfigurationDual-Single
Channel ModeEnhancement--
QualificationAEC-Q101-AEC-Q101
TradenameOptiMOS-OptiMOS
PackagingReelReelReel
Height1.27 mm-1.27 mm
Length5.9 mm-5.9 mm
SeriesOptiMOS-T2-OptiMOS-T2
Transistor Type2 N-Channel-1 N-Channel
Width5.15 mm-5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time19 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time3 ns--
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time58 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesIPG20N06S4L-11A SP001200162IPG20N06S4L-11 SP001404020IPG20N06S4L-11 IPG2N6S4L11XT SP000705550
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPG20N06S4L14AATMA1 MOSFET N-CHANNEL_55/60V
IPG20N06S4L11AATMA1 MOSFET N-CHANNEL_55/60V
IPG20N06S4L14ATMA2 MOSFET MOSFET
IPG20N06S4L11ATMA2 MOSFET
IPG20N06S4L11ATMA1 MOSFET 2N-CH 8TDSON
IPG20N06S4L11AATMA1 MOSFET 2N-CH 8TDSON
IPG20N06S4L14ATMA2 MOSFET 2N-CH 8TDSON
IPG20N06S4L14AATMA1 MOSFET 2N-CH 8TDSON
IPG20N06S4L14ATMA1 MOSFET 2N-CH 8TDSON
Infineon Technologies
Infineon Technologies
IPG20N06S4L14ATMA1 MOSFET N-CHANNEL_55/60V
IPG20N06S4L11ATMA1 MOSFET N-CHANNEL_55/60V
IPG20N06S4L11ATMA1-CUT TAPE New and Original
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