PartNumber | IPG20N06S4L11AATMA1 | IPG20N06S4L11ATMA2 | IPG20N06S4L11ATMA1 |
Description | MOSFET N-CHANNEL_55/60V | MOSFET | MOSFET N-CHANNEL_55/60V |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TDSON-8 | - | TDSON-8 |
Number of Channels | 2 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 20 A | - | - |
Rds On Drain Source Resistance | 15.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 16 V | - | - |
Qg Gate Charge | 53 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 65 W | - | - |
Configuration | Dual | - | Single |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | AEC-Q101 |
Tradename | OptiMOS | - | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | - | 1.27 mm |
Length | 5.9 mm | - | 5.9 mm |
Series | OptiMOS-T2 | - | OptiMOS-T2 |
Transistor Type | 2 N-Channel | - | 1 N-Channel |
Width | 5.15 mm | - | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 19 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3 ns | - | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 58 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Part # Aliases | IPG20N06S4L-11A SP001200162 | IPG20N06S4L-11 SP001404020 | IPG20N06S4L-11 IPG2N6S4L11XT SP000705550 |