PartNumber | IPL65R650C6SATMA1 | IPL65R460CFDAUMA1 | IPL65R660E6AUMA1 |
Description | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | MOSFET N-Ch 700V 8.3A VSON-5 | MOSFET LOW POWER PRICE/PERFORM |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | ThinPAK-56-8 | VSON-4 | VSON-4 |
Number of Channels | 1 Channel | 2 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
Id Continuous Drain Current | 6.7 A | 8.3 A | 7 A |
Rds On Drain Source Resistance | 650 mOhms | 460 mOhms | 594 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 4 V | 2.5 V |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Qg Gate Charge | 21 nC | 31.5 nC | 23 nC |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 56.8 W | 83.3 W | 63 W |
Configuration | Single | Dual | Single |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1.1 mm | 1.1 mm |
Length | 6 mm | 8 mm | 8 mm |
Series | CoolMOS C6 | CoolMOS CFDA | CoolMOS E6 |
Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
Width | 5 mm | 8 mm | 8 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 13 ns | 8 ns | 11 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9 ns | 7 ns | 8 ns |
Factory Pack Quantity | 5000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 80 ns | 38 ns | 64 ns |
Typical Turn On Delay Time | 12 ns | 10 ns | 10 ns |
Part # Aliases | IPL65R650C6S SP001163082 | IPL65R460CFD SP000949260 | IPL65R660E6AUMA1 SP000895212 |
Unit Weight | 0.002677 oz | - | - |
Channel Mode | - | - | Enhancement |