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| PartNumber | IPT012N08N5ATMA1 | IPT012N08N5 012N08N5 | IPT012N08N5 |
| Description | MOSFET N-Ch 80V 300A HSOF-8 | Trans MOSFET N-CH 80V 300A 9-Pin(8+Tab) HSOF | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | HSOF-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 300 A | - | - |
| Rds On Drain Source Resistance | 1.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 178 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | Reel |
| Height | 2.4 mm | - | - |
| Length | 10.58 mm | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 10.1 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 120 S | - | - |
| Fall Time | 30 ns | - | 30 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 31 ns | - | 31 ns |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 82 ns | - | 82 ns |
| Typical Turn On Delay Time | 35 ns | - | 35 ns |
| Part # Aliases | IPT012N08N5 SP001227054 | - | - |
| Unit Weight | 0.027262 oz | - | - |
| Part Aliases | - | - | IPT012N08N5 SP001227054 |
| Package Case | - | - | HSOF-8 |
| Pd Power Dissipation | - | - | 375 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 300 A |
| Vds Drain Source Breakdown Voltage | - | - | 80 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.2 V |
| Rds On Drain Source Resistance | - | - | 1.7 mOhms |
| Qg Gate Charge | - | - | 178 nC |
| Forward Transconductance Min | - | - | 120 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPT012N08N5ATMA1 | MOSFET N-Ch 80V 300A HSOF-8 | |
| IPT012N08N5ATMA1 | MOSFET N-Ch 80V 300A HSOF-8 | ||
| IPT012N08N5 012N08N5 | New and Original | ||
| IPT012N08N5 | Trans MOSFET N-CH 80V 300A 9-Pin(8+Tab) HSOF |