IPW60R125P

IPW60R125P6 vs IPW60R125P6XKSA1 vs IPW60R125P6,6R125P6,

 
PartNumberIPW60R125P6IPW60R125P6XKSA1IPW60R125P6,6R125P6,
DescriptionMOSFET HIGH POWER PRICE/PERFORMMOSFET HIGH POWER PRICE/PERFORM
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance113 mOhms113 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V3.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge56 nC56 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation219 W219 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingTubeTube-
Height21.1 mm21.1 mm-
Length16.13 mm16.13 mm-
SeriesCoolMOS P6CoolMOS P6-
Transistor Type1 N-Channel1 N-Channel-
Width5.21 mm5.21 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity240240-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time44 ns44 ns-
Typical Turn On Delay Time14 ns14 ns-
Part # AliasesIPW60R125P6XKSA1 SP001114656IPW60R125P6 SP001114656-
Unit Weight1.340411 oz1.340411 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPW60R125P6 MOSFET HIGH POWER PRICE/PERFORM
IPW60R125P6XKSA1 MOSFET HIGH POWER PRICE/PERFORM
IPW60R125P6XKSA1 MOSFET HIGH POWER PRICE/PERFORM
IPW60R125P6 MOSFET HIGH POWER PRICE/PERFORM
IPW60R125P6,6R125P6, New and Original
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