IRF1010EP

IRF1010EPBF vs IRF1010EPBF , MM3Z5V1B vs IRF1010EPBF IRF1010E

 
PartNumberIRF1010EPBFIRF1010EPBF , MM3Z5V1BIRF1010EPBF IRF1010E
DescriptionMOSFET MOSFT 60V 81A 12mOhm 86.6nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current81 A--
Rds On Drain Source Resistance12 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge86.6 nC--
Pd Power Dissipation170 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001569818--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF1010EPBF MOSFET MOSFT 60V 81A 12mOhm 86.6nC
Infineon Technologies
Infineon Technologies
IRF1010EPBF MOSFET N-CH 60V 84A TO-220AB
IRF1010EPBF , MM3Z5V1B New and Original
IRF1010EPBF IRF1010E New and Original
IRF1010EPBF,F1010E,IRF10 New and Original
IRF1010EPBF,IRF1010E, New and Original
IRF1010EPBF-M New and Original
IRF1010EPBF-MXG New and Original
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