IRF1010EZS

IRF1010EZSTRLP vs IRF1010EZS vs IRF1010EZSPBF

 
PartNumberIRF1010EZSTRLPIRF1010EZSIRF1010EZSPBF
DescriptionMOSFET MOSFT 60V 84A 8.5mOhm 58nCMOSFET N-CH 60V 75A D2PAKMOSFET N-CH 60V 75A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance8.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge58 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon / IR--
Fall Time54 ns--
Product TypeMOSFET--
Rise Time90 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time19 ns--
Part # AliasesSP001561470--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF1010EZSTRLP MOSFET MOSFT 60V 84A 8.5mOhm 58nC
Infineon Technologies
Infineon Technologies
IRF1010EZSTRLP MOSFET N-CH 60V 75A D2PAK
IRF1010EZS MOSFET N-CH 60V 75A D2PAK
IRF1010EZSPBF MOSFET N-CH 60V 75A D2PAK
IRF1010EZSTRLP-CUT TAPE New and Original
IRF1010EZSPBF,IRF1010EZS New and Original
IRF1010EZSPBF,IRF1010EZSTRLPBF,F1010EZS New and Original
IRF1010EZSTRLPBF New and Original
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