PartNumber | IRF6609TR1 | IRF6607 | IRF6608 |
Description | MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC | MOSFET | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | N | N | N |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DirectFET-MT | DirectFET-MT | DirectFET-ST |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 30 V | 30 V |
Id Continuous Drain Current | 31 A | 27 A | 11.8 A |
Rds On Drain Source Resistance | 2.6 mOhms | 4.4 mOhms | 11 mOhms |
Vgs Gate Source Voltage | 20 V | 12 V | 12 V |
Qg Gate Charge | 46 nC | 50 nC | 15 nC |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 89 W | 42 W | 42 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 0.7 mm | 0.7 mm | 0.7 mm |
Length | 6.35 mm | 6.35 mm | 4.85 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | HEXFET Power MOSFET | HEXFET Power MOSFET | HEXFET Power MOSFET |
Width | 5.05 mm | 5.05 mm | 3.95 mm |
Brand | Infineon / IR | Infineon / IR | Infineon / IR |
Fall Time | 9.8 ns | 13 ns | 3.4 ns |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 95 ns | 8 ns | 12 ns |
Factory Pack Quantity | 1000 | 4800 | 4800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 26 ns | 32 ns | 16 ns |
Typical Turn On Delay Time | 24 ns | 60 ns | 13 ns |
Part # Aliases | SP001529252 | SP001532212 | SP001524584 |
Unit Weight | 0.035274 oz | - | - |