IRF6646TR

IRF6646TRPBF vs IRF6646TR1PBF vs IRF6646TR1

 
PartNumberIRF6646TRPBFIRF6646TR1PBFIRF6646TR1
DescriptionMOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nCMOSFET MOSFT 80V 12A 9.5mOhm 36nC QgMOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYN
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDirectFET-MNDirectFET-MNDirectFET-MN
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V80 V
Id Continuous Drain Current12 A12 A12 A
Rds On Drain Source Resistance7.6 mOhms7.6 mOhms9.5 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge36 nC36 nC36 nC
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation89 W89 W2.8 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameDirectFET--
PackagingReelReelReel
Height0.7 mm0.7 mm0.7 mm
Length6.35 mm6.35 mm6.35 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.05 mm5.05 mm5.05 mm
BrandInfineon / IRInfineon / IRInfineon / IR
Fall Time12 ns12 ns12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time20 ns20 ns20 ns
Factory Pack Quantity480010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns-31 ns
Typical Turn On Delay Time17 ns-17 ns
Part # AliasesSP001564784SP001563466SP001576866
Vgs th Gate Source Threshold Voltage-4.9 V-
Forward Transconductance Min-17 S-
Moisture Sensitive-YesYes
Unit Weight-0.017637 oz-
Type--DirectFet Power MOSFET
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF6646TRPBF MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
IRF6646TR1PBF MOSFET MOSFT 80V 12A 9.5mOhm 36nC Qg
IRF6646TR1 MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
IRF6646TRPBF. New and Original
IRF6646TRPBF-CUT TAPE New and Original
Infineon Technologies
Infineon Technologies
IRF6646TR1 MOSFET N-CH 80V 12A DIRECTFET
IRF6646TR1PBF MOSFET N-CH 80V 12A DIRECTFET
IRF6646TRPBF MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
Top