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| PartNumber | IRF7329TRPBF | IRF7329TR | IRF7329TRPBF, |
| Description | MOSFET MOSFT DUAL PCh -12V 9.2A | MOSFET 2P-CH 12V 9.2A 8-SOIC | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 9.2 A | - | - |
| Rds On Drain Source Resistance | 17 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Qg Gate Charge | 57 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 260 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.6 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001566104 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Series | - | HEXFETR | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 2W | - |
| Drain to Source Voltage Vdss | - | 12V | - |
| Input Capacitance Ciss Vds | - | 3450pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 9.2A | - |
| Rds On Max Id Vgs | - | 17 mOhm @ 9.2A, 4.5V | - |
| Vgs th Max Id | - | 900mV @ 250μA | - |
| Gate Charge Qg Vgs | - | 57nC @ 4.5V | - |