PartNumber | IS61WV51216EEBLL-10BLI | IS61WV51216EEBLL-10B2LI | IS61WV51216EEBLL-10B2LI-TR |
Description | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS |
Manufacturer | ISSI | ISSI | ISSI |
Product Category | SRAM | SRAM | SRAM |
RoHS | Y | - | - |
Memory Size | 8 Mbit | 8 Mbit | 8 Mbit |
Organization | 512 k x 16 | 512 k x 16 | 512 k x 16 |
Access Time | 10 ns | 10 ns | 10 ns |
Interface Type | Parallel | Parallel | Parallel |
Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
Supply Voltage Min | 2.4 V | 2.4 V | 2.4 V |
Supply Current Max | 95 mA | 95 mA | 95 mA |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TFBGA-48 | TFBGA-48 | TFBGA-48 |
Memory Type | SDR | SDR | SDR |
Series | IS61WV51216EEBLL | IS61WV51216EEBLL | IS61WV51216EEBLL |
Type | Asynchronous | Asynchronous | Asynchronous |
Brand | ISSI | ISSI | ISSI |
Moisture Sensitive | Yes | - | - |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 480 | 480 | 2500 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Packaging | - | - | Reel |