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| PartNumber | IS61WV51216EEBLL-10T2LI | IS61WV51216EEBLL-10TLI | IS61WV51216EEBLL-10T2LI-TR |
| Description | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS |
| Manufacturer | ISSI | ISSI | ISSI |
| Product Category | SRAM | SRAM | SRAM |
| Memory Size | 8 Mbit | 8 Mbit | 8 Mbit |
| Organization | 512 k x 16 | 512 k x 16 | 512 k x 16 |
| Access Time | 10 ns | 10 ns | 10 ns |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Supply Voltage Min | 2.4 V | 2.4 V | 2.4 V |
| Supply Current Max | 95 mA | 95 mA | 95 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-48 | TSOP-44 | TSOP-48 |
| Memory Type | SDR | SDR | SDR |
| Series | IS61WV51216EEBLL | IS61WV51216EEBLL | IS61WV51216EEBLL |
| Type | Asynchronous | Asynchronous | Asynchronous |
| Brand | ISSI | ISSI | ISSI |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 96 | 135 | 1500 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Packaging | - | - | Reel |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ISSI |
IS61WV51216EEBLL-10TLI-TR | SRAM 8M 8,10ns 2.4-3.6V 512Kx16 LP Asyn SRAM | |
| IS61WV51216EEBLL-10T2LI | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS | ||
| IS61WV51216EEBLL-10TLI | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS | ||
| IS61WV51216EEBLL-10T2LI-TR | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS | ||
| IS61WV51216EEBLL-10TLI | IC SRAM 8M PARALLEL 44TSOP II |