PartNumber | IXFH18N60P | IXFH18N100Q3 | IXFH180N20X3 |
Description | MOSFET 600V 18A | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 1 kV | - |
Id Continuous Drain Current | 18 A | 18 A | - |
Rds On Drain Source Resistance | 400 mOhms | 660 mOhms | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 360 W | 830 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Series | IXFH18N60 | IXFH18N100 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.3 mm | - | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 16 S | 16 S | - |
Fall Time | 22 ns | 13 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 22 ns | 33 ns | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 62 ns | 40 ns | - |
Typical Turn On Delay Time | 21 ns | 37 ns | - |
Unit Weight | 0.229281 oz | 0.056438 oz | - |
Qg Gate Charge | - | 90 nC | - |