IXFH18N6

IXFH18N60P vs IXFH18N60X vs IXFH18N65X2

 
PartNumberIXFH18N60PIXFH18N60XIXFH18N65X2
DescriptionMOSFET 600V 18AMOSFET DISCMSFT NCH ULTRJNCTN XCLASSMOSFET 650V/18A TO-247
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V650 V
Id Continuous Drain Current18 A18 A18 A
Rds On Drain Source Resistance400 mOhms230 mOhms200 mOhms
Vgs Gate Source Voltage30 V30 V10 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation360 W320 W290 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHiPerFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH18N60-650V Ultra Junction X2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.3 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min16 S-8 S
Fall Time22 ns24 ns26 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns30 ns30 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time62 ns63 ns50 ns
Typical Turn On Delay Time21 ns20 ns20 ns
Unit Weight0.229281 oz--
Vgs th Gate Source Threshold Voltage-2.5 V3 V
Qg Gate Charge-35 nC29 nC
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFH18N60P MOSFET 600V 18A
IXFH18N60X MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
IXFH18N65X2 MOSFET 650V/18A TO-247
IXFH18N60P MOSFET N-CH 600V 18A TO-247
IXFH18N60X MOSFET N-CH 600V 18A TO-247
Top