PartNumber | IXFH20N100P | IXFH20N50P3 | IXFH20N60 |
Description | MOSFET 20 Amps 1000V 1 Rds | MOSFET Polar3 HiPerFET Power MOSFET | MOSFET 600V 20A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 500 V | 600 V |
Id Continuous Drain Current | 20 A | 20 A | 20 A |
Rds On Drain Source Resistance | 570 mOhms | 300 mOhms | 350 mOhms |
Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | 20 V |
Qg Gate Charge | 126 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 660 W | - | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 21.46 mm | - | 21.46 mm |
Length | 16.26 mm | - | 16.26 mm |
Series | IXFH20N100 | IXFH20N50 | IXFH20N60 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Polar Power MOSFET HiPerFET | - | - |
Width | 5.3 mm | - | 5.3 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 8 S | - | 18 S |
Fall Time | 45 ns | - | 40 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 37 ns | - | 43 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 56 ns | - | 70 ns |
Typical Turn On Delay Time | 40 ns | - | 20 ns |
Unit Weight | 0.229281 oz | 0.056438 oz | 0.229281 oz |