PartNumber | IXFH24N80P | IXFH24N90P | IXFH24N60X |
Description | MOSFET DIODE Id24 BVdass800 | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 900 V | 600 V |
Id Continuous Drain Current | 24 A | 24 A | 24 A |
Rds On Drain Source Resistance | 400 mOhms | 420 mOhms | 175 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 650 W | 660 W | 400 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | - |
Height | 21.46 mm | 21.46 mm | - |
Length | 16.26 mm | 16.26 mm | - |
Series | IXFH24N80 | IXFH24N90 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.3 mm | 5.3 mm | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 25 S | 16 S | - |
Fall Time | 24 ns | 38 ns | 15 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 40 ns | 29 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 75 ns | 68 ns | 45 ns |
Typical Turn On Delay Time | 32 ns | 46 ns | 18 ns |
Unit Weight | 0.229281 oz | 0.229281 oz | - |
Vgs th Gate Source Threshold Voltage | - | 6.5 V | 2.5 V |
Qg Gate Charge | - | 130 nC | 47 nC |