IXFH24N

IXFH24N80P vs IXFH24N60X vs IXFH24N50

 
PartNumberIXFH24N80PIXFH24N60XIXFH24N50
DescriptionMOSFET DIODE Id24 BVdass800MOSFET DISCMSFT NCH ULTRJNCTN XCLASSMOSFET 500V 24A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V600 V500 V
Id Continuous Drain Current24 A24 A24 A
Rds On Drain Source Resistance400 mOhms175 mOhms230 mOhms
Vgs Gate Source Voltage30 V30 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation650 W400 W300 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTube-Tube
Height21.46 mm-21.46 mm
Length16.26 mm-16.26 mm
SeriesIXFH24N80-IXFH24N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.3 mm-5.3 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min25 S-21 S
Fall Time24 ns15 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns29 ns33 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns45 ns65 ns
Typical Turn On Delay Time32 ns18 ns16 ns
Unit Weight0.229281 oz-0.229281 oz
Vgs th Gate Source Threshold Voltage-2.5 V-
Qg Gate Charge-47 nC-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFH24N80P MOSFET DIODE Id24 BVdass800
IXFH24N90P MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFH24N60X MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
IXFH24N50 MOSFET 500V 24A
IXFH24N40 New and Original
IXFH24N50F New and Original
IXFH24N50P3 New and Original
IXFH24N90P-ND New and Original
IXFH24N60X MOSFET N-CH 600V 24A TO-247
IXFH24N90P Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFH24N80P Darlington Transistors MOSFET DIODE Id24 BVdass800
IXFH24N50 MOSFET 500V 24A
IXFH24N50Q MOSFET 500V 24A Q-Class
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