| PartNumber | IXFH24N80P | IXFH24N60X | IXFH24N50 |
| Description | MOSFET DIODE Id24 BVdass800 | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS | MOSFET 500V 24A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 500 V |
| Id Continuous Drain Current | 24 A | 24 A | 24 A |
| Rds On Drain Source Resistance | 400 mOhms | 175 mOhms | 230 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 650 W | 400 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | - | Tube |
| Height | 21.46 mm | - | 21.46 mm |
| Length | 16.26 mm | - | 16.26 mm |
| Series | IXFH24N80 | - | IXFH24N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | - | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 25 S | - | 21 S |
| Fall Time | 24 ns | 15 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 29 ns | 33 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 75 ns | 45 ns | 65 ns |
| Typical Turn On Delay Time | 32 ns | 18 ns | 16 ns |
| Unit Weight | 0.229281 oz | - | 0.229281 oz |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Qg Gate Charge | - | 47 nC | - |