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| PartNumber | NSS1C201MZ4T1G | NSS1C201MZ | NSS1C201MZ4T1G-CUT TAPE |
| Description | Bipolar Transistors - BJT 100V, NPN Low VCE Trans. | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 140 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 180 mV | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS1C201MZ4 | - | - |
| DC Current Gain hFE Max | 150 | - | - |
| Height | 1.57 mm | - | - |
| Length | 6.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.5 mm | - | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 2000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSS1C201MZ4T3G | Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN | ||
| NSS1C201MZ4T1G | Bipolar Transistors - BJT 100V, NPN Low VCE Trans. | ||
| NSS1C201MZ | New and Original | ||
| NSS1C201MZ4T1G-CUT TAPE | New and Original | ||
ON Semiconductor |
NSS1C201MZ4T1G | Bipolar Transistors - BJT 100V, NPN Low VCE Trans. | |
| NSS1C201MZ4T3G | Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN |