| PartNumber | NSS1C201MZ4T3G | NSS1C201MZ4T1G |
| Description | Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN | Bipolar Transistors - BJT 100V, NPN Low VCE Trans. |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT-223-4 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V |
| Collector Base Voltage VCBO | 140 V | 140 V |
| Emitter Base Voltage VEBO | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 180 mV | 180 mV |
| Maximum DC Collector Current | 3 A | 2 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | NSS1C201MZ4 | NSS1C201MZ4 |
| DC Current Gain hFE Max | 150 | 150 |
| Height | 1.57 mm | 1.57 mm |
| Length | 6.5 mm | 6.5 mm |
| Packaging | Reel | Reel |
| Width | 3.5 mm | 3.5 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| DC Collector/Base Gain hfe Min | 120 | 120 |
| Pd Power Dissipation | 2000 mW | 2000 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 4000 | 1000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.003951 oz | 0.003951 oz |