PartNumber | RN2110,LF(CT | RN2110 | RN2110(TE85L) |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | ||
Manufacturer | Toshiba | - | - |
Product Category | Bipolar Transistors - Pre-Biased | - | - |
RoHS | Y | - | - |
Transistor Polarity | PNP | - | - |
Typical Input Resistor | 4.7 kOhms | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-416-3 | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Continuous Collector Current | - 100 mA | - | - |
Pd Power Dissipation | 100 mW | - | - |
Series | RN2110 | - | - |
Packaging | Reel | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Brand | Toshiba | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000212 oz | - | - |