PartNumber | RN2114(TE85L,F) | RN2114 | RN2114(TE85LF) |
Description | Bipolar Transistors - Pre-Biased SSM (HF) TRANSISTOR Pd 100mW F 1MHz | ||
Manufacturer | Toshiba | - | - |
Product Category | Bipolar Transistors - Pre-Biased | - | - |
RoHS | Y | - | - |
Configuration | Single | - | - |
Transistor Polarity | PNP | - | - |
Typical Input Resistor | 1 kOhms | - | - |
Typical Resistor Ratio | 1 | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | VESM-3 | - | - |
DC Collector/Base Gain hfe Min | 50 | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Continuous Collector Current | - 100 mA | - | - |
Peak DC Collector Current | - 100 mA | - | - |
Pd Power Dissipation | 150 mW | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Reel | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Brand | Toshiba | - | - |
Channel Mode | Enhancement | - | - |
Maximum DC Collector Current | - 100 mA | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |