RN2114

RN2114(TE85L,F) vs RN2114 vs RN2114(TE85LF)

 
PartNumberRN2114(TE85L,F)RN2114RN2114(TE85LF)
DescriptionBipolar Transistors - Pre-Biased SSM (HF) TRANSISTOR Pd 100mW F 1MHz
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor1 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseVESM-3--
DC Collector/Base Gain hfe Min50--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current- 100 mA--
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel--
Emitter Base Voltage VEBO- 5 V--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current- 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2114(TE85L,F) Bipolar Transistors - Pre-Biased SSM (HF) TRANSISTOR Pd 100mW F 1MHz
RN2114MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
RN2114MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 1.0Kohms x 10Kohms
RN2114MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 1.0Kohms x 10Kohms
RN2114MFV TL3T New and Original
RN2114(TE85LF)CT-ND New and Original
RN2114(TE85LF)DKR-ND New and Original
RN2114(TE85LF)TR-ND New and Original
RN2114MFVL3F-ND New and Original
RN2114 New and Original
RN2114(TE85LF) New and Original
RN2114MFV New and Original
RN2114MFV(TL3SONY) New and Original
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