RN2116

RN2116,LF(CT vs RN2116 vs RN2116LF(CT

 
PartNumberRN2116,LF(CTRN2116RN2116LF(CT
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistorBipolar Transistors - Pre-Biased SSM PLN(LF) TRAN 100MW, /200M
ManufacturerToshibaToshiba-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Transistor PolarityPNPPNP-
Typical Input Resistor4.7 kOhms4.7 kOhms-
Typical Resistor Ratio0.470.47-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-416-3--
DC Collector/Base Gain hfe Min50--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA- 100 mA-
Pd Power Dissipation100 mW--
SeriesRN2116--
PackagingReelReel-
Emitter Base Voltage VEBO- 7 V--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
Pd Power Dissipation-150 mW-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 65 C-
Collector Emitter Voltage VCEO Max-- 50 V-
Emitter Base Voltage VEBO-- 7 V-
DC Collector Base Gain hfe Min-50-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
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