 | | | |
| PartNumber | RN2118MFV(TPL3) | RN2118MFV(TPL3)CT-ND | RN2118MFV(TPL3)DKR-ND |
| Description | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 47Kohms x 10Kohms | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 47 kOhms | - | - |
| Typical Resistor Ratio | 4.7 | - | - |
| Mounting Style | SMD/SMT | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN2118 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 25 V | - | - |
| Height | 1.2 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | PNP Epitaxial Silicon Transistor | - | - |
| Width | 0.5 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
RN2118MFV(TPL3) | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 47Kohms x 10Kohms | |
| RN2118MFV(TPL3) | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 47Kohms x 10Kohms | ||
| RN2118MFV(TPL3)CT-ND | New and Original | ||
| RN2118MFV(TPL3)DKR-ND | New and Original | ||
| RN2118MFV(TPL3)TR-ND | New and Original |