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| PartNumber | RN2131MFV(TPL3) | RN2131MFV(TL3,T) | RN2131MFV |
| Description | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx0ohms | Bipolar Transistors - Pre-Biased Bias Resistor PNP 100kohm -100mA -50V | |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Configuration | Single | - | Single |
| Transistor Polarity | PNP | - | PNP |
| Typical Input Resistor | 100 kOhms | - | 100 kOhms |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-723 | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Continuous Collector Current | - 100 mA | - | - 100 mA |
| Peak DC Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 150 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | RN2131 | RN2131 | - |
| Packaging | Reel | Reel | Reel |
| Collector Base Voltage VCBO | - 50 V | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | PNP Epitaxial Silicon Transistor | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | Toshiba | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Package Case | - | - | SOT-723 |
| Pd Power Dissipation | - | - | 150 mW |
| Collector Emitter Voltage VCEO Max | - | - | - 50 V |
| Emitter Base Voltage VEBO | - | - | - 5 V |
| DC Collector Base Gain hfe Min | - | - | 120 |