PartNumber | SCT2160KEC | SCT2280KEC | SCT2120AFC |
Description | MOSFET 1200V20A160mOhm Silicon Carbide SiC | MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC | MOSFET MOSFET650V 29 -220A Silicon Carbide SiC |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | SiC | SiC | SiC |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1200 V | 1200 V | 650 V |
Id Continuous Drain Current | 22 A | 14 A | 29 A |
Rds On Drain Source Resistance | 160 mOhms | 280 mOhms | 120 mOhms |
Vgs th Gate Source Threshold Voltage | 1.6 V | 1.6 V | 1.6 V |
Vgs Gate Source Voltage | - 6 V, 22 V | - 6 V, 22 V | - 6 V, 22 V |
Qg Gate Charge | 62 nC | 36 nC | 61 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 165 W | 108 W | 165 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | SCT2x | SCT2x | SCT2x |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | 1 N-Channel Power MOSFET |
Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Forward Transconductance Min | 2.4 S | 1.4 S | 2.7 S |
Fall Time | 27 ns | 29 ns | 19 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 19 ns | 31 ns |
Factory Pack Quantity | 360 | 360 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 67 ns | 47 ns | 60 ns |
Typical Turn On Delay Time | 23 ns | 19 ns | 22 ns |
Part # Aliases | SCT2160KE | SCT2280KE | SCT2120AF |
Unit Weight | 1.340411 oz | 1.340411 oz | 0.211644 oz |