PartNumber | SI4925DDY-T1-GE3 | SI4925DDY-T1-GE3-CUT TAPE |
Description | MOSFET -30V Vds 20V Vgs SO-8 | |
Manufacturer | Vishay | - |
Product Category | MOSFET | - |
RoHS | E | - |
Technology | Si | - |
Mounting Style | SMD/SMT | - |
Package / Case | SO-8 | - |
Number of Channels | 2 Channel | - |
Transistor Polarity | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - |
Id Continuous Drain Current | 8 A | - |
Rds On Drain Source Resistance | 29 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 32 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 5 W | - |
Configuration | Dual | - |
Channel Mode | Enhancement | - |
Tradename | TrenchFET | - |
Packaging | Reel | - |
Height | 1.75 mm | - |
Length | 4.9 mm | - |
Series | SI4 | - |
Transistor Type | 2 P-Channel | - |
Width | 3.9 mm | - |
Brand | Vishay / Siliconix | - |
Forward Transconductance Min | 23 S | - |
Fall Time | 12 ns | - |
Product Type | MOSFET | - |
Rise Time | 8 ns | - |
Factory Pack Quantity | 2500 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 45 ns | - |
Typical Turn On Delay Time | 10 ns | - |
Part # Aliases | SI4925DDY-GE3 | - |
Unit Weight | 0.006596 oz | - |