PartNumber | SI7900AEDN-T1-E3 | SI7900AEDN-T1-GE3 |
Description | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | E | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V |
Id Continuous Drain Current | 8.5 A | 8.5 A |
Rds On Drain Source Resistance | 26 mOhms | 26 mOhms |
Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV |
Vgs Gate Source Voltage | 12 V | 12 V |
Qg Gate Charge | 16 nC | 16 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 3.1 W | 3.1 W |
Configuration | Dual | Dual |
Channel Mode | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET |
Packaging | Reel | Reel |
Series | SI7 | SI7 |
Transistor Type | 2 N-Channel | 2 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 25 S | 25 S |
Fall Time | 4.2 ns | 4.2 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 1.3 ns | 1.3 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 8.6 ns | 8.6 ns |
Typical Turn On Delay Time | 0.85 ns | 0.85 ns |
Part # Aliases | SI7900AEDN-T1 | SI7900AEDN-GE3 |