PartNumber | SiR180DP-T1-RE3 | SIR167DP-T1-GE3 | SIR170DP-T1-RE3 |
Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | MOSFET -30V Vds 25V Vgs PowerPAK SO-8 | MOSFET N-Channel 100 V (D-S) MOSFET |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 30 V | 100 V |
Id Continuous Drain Current | 60 A | 60 A | 95 A |
Rds On Drain Source Resistance | 2.05 mOhms | 4.6 mOhms | 4 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V | - 5.5 V |
Vgs Gate Source Voltage | 20 V | 25 V | 20 V |
Qg Gate Charge | 87 nC | 74 nC | 93 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 83.3 W | 65.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | Depletion |
Packaging | Reel | Reel | Reel |
Series | SIR | SIR | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 35 S | - | - |
Fall Time | 7 ns | 35 ns | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 20 ns | 7 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 31 ns | 18 ns | 43 ns |
Typical Turn On Delay Time | 17 ns | 25 ns | 12 ns |
Tradename | - | TrenchFET, PowerPAK | TrenchFET |