SIR186DP-T1-RE3

SIR186DP-T1-RE3
Mfr. #:
SIR186DP-T1-RE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIR186DP-T1-RE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR186DP-T1-RE3 DatasheetSIR186DP-T1-RE3 Datasheet (P4-P6)SIR186DP-T1-RE3 Datasheet (P7-P9)SIR186DP-T1-RE3 Datasheet (P10-P12)SIR186DP-T1-RE3 Datasheet (P13)
ECAD Model:
More Information:
SIR186DP-T1-RE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
3.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.6 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
24.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
57 W
Configuration:
Single
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIR
Brand:
Vishay / Siliconix
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
22 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
10 ns
Tags
SIR18, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 60V 23A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 60V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 60V, 0.06A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 0.06A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 60V, 0,06A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0037ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.6V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SIR186DP-T1-RE3
DISTI # V99:2348_22521044
Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
  • 3000000:$0.5343
  • 600000:$0.5350
  • 60000:$0.5357
  • 6000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3TR-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 15000:$0.4899
  • 6000:$0.5090
  • 3000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3CT-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3DKR-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1000:€0.4869
  • 500:€0.4929
  • 100:€0.5019
  • 50:€0.5089
  • 25:€0.5759
  • 10:€0.7099
  • 1:€0.9899
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4669
  • 30000:$0.4799
  • 18000:$0.4929
  • 12000:$0.5139
  • 6000:$0.5299
SIR186DP-T1-RE3
DISTI # 37AC0918
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes0
  • 500:$0.7000
  • 250:$0.7570
  • 100:$0.8140
  • 50:$0.8960
  • 25:$0.9780
  • 10:$1.0600
  • 1:$1.2900
SIR186DP-T1-RE3
DISTI # 59AC7438
Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 10000:$0.4630
  • 6000:$0.4740
  • 4000:$0.4920
  • 2000:$0.5470
  • 1000:$0.6020
  • 1:$0.6270
SIR186DP-T1-RE3
DISTI # 78-SIR186DP-T1-RE3
Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
0
  • 1:$1.2700
  • 10:$1.0400
  • 100:$0.8050
  • 500:$0.6920
  • 1000:$0.5460
  • 3000:$0.5100
SIR186DP-T1-RE3
DISTI # 2785448
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO
RoHS: Compliant
0
  • 5000:$0.7840
  • 1000:$0.8120
  • 500:$0.8580
  • 250:$1.0100
  • 100:$1.2300
  • 25:$1.5700
  • 5:$1.8900
SIR186DP-T1-RE3
DISTI # 2785448
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO0
  • 500:£0.5340
  • 250:£0.5780
  • 100:£0.6210
  • 10:£0.8660
  • 1:£1.1200
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OMO.#: OMO-USBLC6-2SC6-STMICROELECTRONICS

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C1608X5R1A106K080AC

Mfr.#: C1608X5R1A106K080AC

OMO.#: OMO-C1608X5R1A106K080AC-TDK

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Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G-ON-SEMICONDUCTOR

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Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of SIR186DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.27
$1.27
10
$1.04
$10.40
100
$0.80
$80.50
500
$0.69
$346.00
1000
$0.55
$546.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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