SIR638

SIR638ADP-T1-RE3 vs SIR638DP-T1-GE3 vs SIR638DP-T1-RE3

 
PartNumberSIR638ADP-T1-RE3SIR638DP-T1-GE3SIR638DP-T1-RE3
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK SO-8MOSFET 40V Vds 20V Vgs PowerPAK SO-8MOSFET 40V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerPAK-SO-8-PowerPAK-SO-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V-40 V
Id Continuous Drain Current100 A-100 A
Rds On Drain Source Resistance730 uOhms-730 uOhms
Vgs th Gate Source Threshold Voltage1.1 V-1.1 V
Vgs Gate Source Voltage20 V, - 16 V-20 V, - 16 V
Qg Gate Charge165 nC-204 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation104 W-104 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSIRSIRSIR
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min147 S-147 S
Fall Time10 ns-10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time42 ns-21 ns
Factory Pack Quantity300030006000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time42 ns-52 ns
Typical Turn On Delay Time15 ns-20 ns
Unit Weight-0.002610 oz0.017870 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR638ADP-T1-RE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR638DP-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR638DP-T1-RE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIR638DP-T1-GE3 MOSFET N-CH 40V 100A PPAK SO-8
SIR638ADP-T1-RE3 MOSFET N-CH 40V 100A POWERPAKSO
SIR638DP-T1-RE3 MOSFET N-CH 40V 100A POWERPAKSO
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