 |  | |
| PartNumber | SIR664DP-T1-GE3 | SIR664DP |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | |
| Manufacturer | Vishay | - |
| Product Category | MOSFET | - |
| RoHS | E | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 60 A | - |
| Rds On Drain Source Resistance | 6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 26 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 50 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | - |
| Packaging | Reel | - |
| Series | SIR | - |
| Transistor Type | 1 N-Channel | - |
| Brand | Vishay / Siliconix | - |
| Forward Transconductance Min | 70 S | - |
| Fall Time | 7 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 12 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 24 ns | - |
| Typical Turn On Delay Time | 10 ns | - |
| Unit Weight | 0.017870 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR664DP-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 | |
| SIR664DP | New and Original | ||
Vishay |
SIR664DP-T1-GE3 | MOSFET N-CH 60V 60A PPAK SO-8 |