PartNumber | SIS402DN-T1-GE3 | SIS406DN-T1-GE3 | SIS407ADN-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 25V Vgs PowerPAK 1212-8 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIS | SIS | SIS |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SIJ484DP-T1-GE3 | SIS406DN-GE3 | - |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PowerPAK-1212-8 | PowerPAK-1212-8 |
Height | - | 1.04 mm | 1.04 mm |
Length | - | 3.3 mm | 3.3 mm |
Width | - | 3.3 mm | 3.3 mm |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | P-Channel |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 18 A |
Rds On Drain Source Resistance | - | - | 9 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 400 mV |
Vgs Gate Source Voltage | - | - | 4.5 V |
Qg Gate Charge | - | - | 112 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 39.1 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 P-Channel |
Forward Transconductance Min | - | - | 70 S |
Fall Time | - | - | 36 ns |
Rise Time | - | - | 4 ns |
Typical Turn Off Delay Time | - | - | 120 ns |
Typical Turn On Delay Time | - | - | 12 ns |