PartNumber | SIS424DN-T1-GE3 | SIS415DNT-T1-GE3 | SIS414DN-T1-GE3 |
Description | MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3 | MOSFET -20V Vds 12V Vgs PowerPAK 1212-8S | MOSFET RECOMMENDED ALT 78-SISA88DN-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIS | SIS | SIS |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SIS424DN-GE3 | - | SIS414DN-GE3 |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 20 V | 30 V |
Id Continuous Drain Current | - | 35 A | 20 A |
Rds On Drain Source Resistance | - | 3.3 mOhms | 16 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.5 V | 600 mV |
Vgs Gate Source Voltage | - | 12 V | 4.5 V |
Qg Gate Charge | - | 180 nC | 22 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 52 W | 31 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 P-Channel | 1 N-Channel |
Forward Transconductance Min | - | 70 S | 50 S |
Fall Time | - | 25 ns | 10 ns |
Rise Time | - | 38 ns | 54 ns |
Typical Turn Off Delay Time | - | 82 ns | 26 ns |
Typical Turn On Delay Time | - | 37 ns | 12 ns |
Height | - | - | 1.04 mm |
Length | - | - | 3.3 mm |
Width | - | - | 3.3 mm |