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SIS414DN-T1-GE3

SIS414DN-T1-GE3
Mfr. #:
SIS414DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SISA88DN-T1-GE3
Lifecycle:
New from this manufacturer.
Datasheet:
SIS414DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
20 A
Rds On - Drain-Source Resistance:
16 mOhms
Vgs th - Gate-Source Threshold Voltage:
600 mV
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
31 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
3.3 mm
Series:
SIS
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
50 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
54 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
SIS414DN-GE3
Tags
SIS41, SIS4, SIS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 10.8A 8-Pin PowerPAK 1212 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600Mv; Msl:- Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,30V,20A,PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.8A; Power Dissipation Pd:3.4W; Voltage Vgs Max:12V
Part # Mfg. Description Stock Price
SIS414DN-T1-GE3
DISTI # SIS414DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 20A 1212-8 PPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIS414DN-T1-GE3
    DISTI # SIS414DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 30V 20A 1212-8 PPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIS414DN-T1-GE3
      DISTI # SIS414DN-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 30V 20A 1212-8 PPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIS414DN-T1-GE3
        DISTI # SIS414DN-T1-GE3        		Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.8A 8-Pin PowerPAK 1212 T/R - Cut TR (SOS) (Alt: SIS414DN-T1-GE3)
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape        		Americas - 450
          SIS414DN-T1-GE3.
          DISTI # 30AC0124          		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.013ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:3.4W,No. of Pins:8Pins RoHS Compliant: Yes0
            SIS414DN-T1-GE3
            DISTI # 781-SIS414DN-T1-GE3            		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SISA88DN-T1-GE3
            RoHS: Compliant            		3
            • 1:$0.8300
            • 10:$0.6690
            • 100:$0.5080
            • 500:$0.4200
            • 1000:$0.3360
            • 3000:$0.3040
            • 6000:$0.2830
            • 9000:$0.2730
            • 24000:$0.2620
            SIS414DN-T1-GE3
            DISTI # 1859002            		Vishay IntertechnologiesMOSFET,N CH,DIODE,30V,20A,PPAK1212-8
            RoHS: Compliant            		0
            • 3000:$0.5170
            • 1000:$0.5270
            • 500:$0.6330
            • 100:$0.7670
            • 10:$1.0100
            • 1:$1.2700
            SIS414DN-T1-GE3
            DISTI # 1859002            		Vishay IntertechnologiesMOSFET,N CH,DIODE,30V,20A,PPAK1212-8
            RoHS: Compliant            		6366
            • 500:£0.2090
            • 250:£0.2120
            • 100:£0.2150
            • 25:£0.2180
            • 5:£0.2210
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            Availability
            Stock:
            Available
            On Order:
            1986
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            Current price of SIS414DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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