SIS413DN-T1-GE3

Mfr. #:: SIS413DN-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:: New from this manufacturer.
Datasheet:: SIS413DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SIS413DN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-1212-8

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 18 A

Rds On - Drain-Source Resistance:: 9.4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 73 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 52 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Height:: 1.04 mm

Length:: 3.3 mm

Series:: SIS

Transistor Type:: 1 P-Channel

Width:: 3.3 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 50 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 11 ns, 82 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 40 ns, 45 ns

Typical Turn-On Delay Time:: 11 ns, 55 ns

Tags: SIS41, SIS4, SIS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS413DN-T1-GE3 Description

*** Electronics: Transistor MOSFET P-CH 30V 18A 8-Pin PowerPAK 1212

***ure Electronics: Single P-Channel -30 V 52 W 110 nC TrenchMOS Surface Mount Mosfet

***enic: 30V 18A 52W 9.4m´Î@10V15A 2.5V@250Ã×A P Channel PowerPAK 1212-8 MOSFETs ROHS

***roFlash: Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ied Electronics & Automation: -30V 9.4mOhm@10V -18A P-Ch G-III

*** Source Electronics: MOSFET P-CH 30V 18A PPAK 1212-8

***nell: MOSFET, P-CH, -30V, -18A, POWERPAK 1212; Transistor Polarity: P Channel; Continuous Drain Current Id: -18A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 52W; Transistor Case Style: PowerPAK 1212; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

SIS413DN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Part #	Mfg.	Description	Stock	Price
SIS413DN-T1-GE3 DISTI # V72:2272_07431901	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	22	10:$0.4255 1:$0.4623
SIS413DN-T1-GE3 DISTI # V36:1790_07431901	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.2045 1500000:$0.2046 300000:$0.2096 30000:$0.2164 3000:$0.2175
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 18A PPAK 1212-8 Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.1995 6000:$0.2025 3000:$0.2175
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 18A PPAK 1212-8 Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2472 500:$0.3090 100:$0.3909 10:$0.5100 1:$0.5800
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 18A PPAK 1212-8 Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2472 500:$0.3090 100:$0.3909 10:$0.5100 1:$0.5800
SIS413DN-T1-GE3 DISTI # 34538557	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	6000:$0.1849 3000:$0.1898
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS413DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIS413DN-T1-GE3 DISTI # SIS413DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS413DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2352 18000:$0.2414 12000:$0.2480 6000:$0.2549 3000:$0.2621
SIS413DN-T1-GE3 DISTI # 99W9577	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET RoHS: Not Compliant	0	50000:$0.1940 30000:$0.2030 20000:$0.2180 10000:$0.2330 5000:$0.2520 1:$0.2580
SIS413DN-T1-GE3 DISTI # 70AC6482	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212,Transistor Polarity:P Channel,Continuous Drain Current Id:-18A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0076ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V RoHS Compliant: Yes RoHS: Compliant	9	500:$0.2310 1000:$0.2310 100:$0.2500 250:$0.2500 1:$0.2730 25:$0.2730 50:$0.2730
SIS413DN-T1-GE3 DISTI # 70459589	Vishay Siliconix	-30V 9.4mOhm@10V -18A P-Ch G-III RoHS: Not Compliant	0	3000:$0.7420
SIS413DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas -
SIS413DN-T1-GE3 DISTI # 2646403	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	3000:$0.3270 1000:$0.3620 500:$0.4520 100:$0.5470 10:$0.7200 1:$0.8890
SIS413DN-T1-GE3 DISTI # 2679713	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	6000:$0.3090 3000:$0.3270
SIS413DN-T1-GE3 DISTI # 2679713	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	9000:£0.1620 3000:£0.1650
SIS413DN-T1-GE3 DISTI # 2646403RL	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	1500:£0.1810 500:£0.1960 100:£0.2960 50:£0.3890 5:£0.4410
SIS413DN-T1-GE3 DISTI # 2646403	Vishay Intertechnologies	MOSFET, P-CH, -30V, -18A, POWERPAK 1212 RoHS: Compliant	0	1500:£0.1810 500:£0.1960 100:£0.2960 50:£0.3890 5:£0.4410
SIS413DNT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 3000

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of SIS413DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.59~~; ~~$0.59~~

10: ~~$0.48~~; ~~$4.78~~

100: ~~$0.36~~; ~~$36.30~~

500: ~~$0.30~~; ~~$150.00~~

1000: ~~$0.24~~; ~~$240.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIS413DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes