PartNumber | SQ9945BEY-T1_GE3 | SQ9945BEY-T1-GE3 | SQ9945BEY-T1-GE3-CUT TAPE |
Description | MOSFET 60V 5.4A 4W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ9945BEY-T1_GE3 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 5.4 A | - | - |
Rds On Drain Source Resistance | 45 mOhms, 45 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 12 nC, 12 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 4 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Series | SQ | SQ | - |
Transistor Type | 2 N-Channel | - | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 12 S, 12 S | - | - |
Fall Time | 1.7 ns, 1.7 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 2.8 ns, 2.8 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 17 ns, 17 ns | - | - |
Typical Turn On Delay Time | 6 ns, 6 ns | - | - |
Unit Weight | 0.017870 oz | 0.017870 oz | - |
Part # Aliases | - | SQ9945BEY-GE3 | - |