 |  | | |
| PartNumber | SQJQ402E-T1_GE3 | SQJQ402E-T1_GE3-CUT TAPE | SQJQ402E-T1-GE3 |
| Description | MOSFET N-Channel 40V AEC-Q101 Qualified | N-CHANNEL 40-V (D-S) 175C MOSF | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-8x8L-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 200 A | - | - |
| Rds On Drain Source Resistance | 1.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 260 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 140 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 69 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJQ404E-T1_GE3 | MOSFET 40V Vds 20V Vgs PowerPAK 8 x 8L | |
| SQJQ402E-T1_GE3 | MOSFET N-Channel 40V AEC-Q101 Qualified | ||
| SQJQ402E-T1_GE3-CUT TAPE | New and Original | ||
| SQJQ402E-T1-GE3 | N-CHANNEL 40-V (D-S) 175C MOSF | ||
| SQJQ402ET1GE3 | New and Original | ||
Vishay |
SQJQ402E-T1_GE3 | MOSFET N-CH 40V 200A POWERPAK8 |