STB8NM60T

STB8NM60T4 vs STB8NM60T4-CUT TAPE vs STB8NM60T4-TR

 
PartNumberSTB8NM60T4STB8NM60T4-CUT TAPESTB8NM60T4-TR
DescriptionMOSFET N-Ch 650 Volt 5 Amp
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance900 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingReel--
Height4.6 mm--
Length10.4 mm--
SeriesSTB8NM60--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.35 mm--
BrandSTMicroelectronics--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STB8NM60T4 MOSFET N-Ch 650 Volt 5 Amp
STB8NM60T4 IGBT Transistors MOSFET N-Ch 650 Volt 5 Amp
STB8NM60T4-CUT TAPE New and Original
STB8NM60T4-TR New and Original
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