PartNumber | STGB20M65DF2 | STGB20N40LZ | STGB20H60DF |
Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss | IGBT Transistors 390V IGBT EAS 300mJ Internally Clamped | IGBT Transistors 600 V, 20 A high speed trench gate field-stop IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Package / Case | D2PAK-3 | D2PAK-3 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 425 V | - |
Collector Emitter Saturation Voltage | 1.55 V | 1.5 V | - |
Maximum Gate Emitter Voltage | 20 V | 16 V | - |
Continuous Collector Current at 25 C | 40 A | - | - |
Pd Power Dissipation | 166 W | 150 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | STGB20M65DF2 | STGB20N40LZ | STGB20H60DF |
Continuous Collector Current Ic Max | 40 A | 25 A | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 uA | 625 uA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Qualification | - | AEC-Q101 | - |
Packaging | - | Reel | - |
Unit Weight | - | 0.079014 oz | - |