STGB4

STGB40H65FB vs STGB40V60F vs STGB4M65DF2

 
PartNumberSTGB40H65FBSTGB40V60FSTGB4M65DF2
DescriptionIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speedIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speedIGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseD2PAK-3D2PAKD2PAK-3
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V650 V
Collector Emitter Saturation Voltage1.6 V1.8 V1.6 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C80 A80 A8 A
Pd Power Dissipation283 W283 W68 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesSTGB40H65FBSTGB40V60FSTGB4M65DF2
PackagingReelReel-
Continuous Collector Current Ic Max80 A-8 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current+/- 250 nA250 nA+/- 250 uA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity100010001000
SubcategoryIGBTsIGBTsIGBTs
Unit Weight-0.070548 oz-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGB40H65FB IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGB40V60F IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGB4M65DF2 IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
STGB40V60F IGBT Transistors IGBT & Power Bipola
STGB4M65DF2 TRENCH GATE FIELD-STOP IGBT, M S
STGB40H65FB IGBT BIPO 650V 40A D2PAK
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