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| PartNumber | STGB40H65FB | STGB40V60F | STGB4M65DF2 |
| Description | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | D2PAK-3 | D2PAK | D2PAK-3 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1.8 V | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 80 A | 8 A |
| Pd Power Dissipation | 283 W | 283 W | 68 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | STGB40H65FB | STGB40V60F | STGB4M65DF2 |
| Packaging | Reel | Reel | - |
| Continuous Collector Current Ic Max | 80 A | - | 8 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 nA | 250 nA | +/- 250 uA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | - | 0.070548 oz | - |