STGB4M65DF2

STGB4M65DF2
Mfr. #:
STGB4M65DF2
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Lifecycle:
New from this manufacturer.
Datasheet:
STGB4M65DF2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGB4M65DF2 more Information STGB4M65DF2 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
D2PAK-3
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.6 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
8 A
Pd - Power Dissipation:
68 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGB4M65DF2
Continuous Collector Current Ic Max:
8 A
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
+/- 250 uA
Product Type:
IGBT Transistors
Factory Pack Quantity:
1000
Subcategory:
IGBTs
Tags
STGB4, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Part # Mfg. Description Stock Price
STGB4M65DF2
DISTI # 497-16964-2-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.4550
  • 2000:$0.4778
  • 1000:$0.5119
STGB4M65DF2
DISTI # 497-16964-1-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$0.6678
  • 100:$0.8084
  • 10:$1.0370
  • 1:$1.1600
STGB4M65DF2
DISTI # 497-16964-6-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$0.6678
  • 100:$0.8084
  • 10:$1.0370
  • 1:$1.1600
STGB4M65DF2
DISTI # STGB4M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin D2PAK T/R (Alt: STGB4M65DF2)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€0.5239
  • 6000:€0.5999
  • 4000:€0.7049
  • 2000:€0.8809
  • 1000:€1.3729
STGB4M65DF2
DISTI # STGB4M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin D2PAK T/R - Bulk (Alt: STGB4M65DF2)
RoHS: Compliant
Min Qty: 2000
Container: Bulk
Americas - 0
  • 20000:$0.4149
  • 10000:$0.4229
  • 6000:$0.4429
  • 4000:$0.4639
  • 2000:$0.4869
STGB4M65DF2
DISTI # 20AC4194
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$0.4070
STGB4M65DF2
DISTI # 511-STGB4M65DF2
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
RoHS: Compliant
0
  • 1:$1.0600
  • 10:$0.9100
  • 100:$0.6990
  • 500:$0.6180
  • 1000:$0.4880
  • 2000:$0.4330
STGB4M65DF2
DISTI # IGBT2123
STMicroelectronicsIGBT 650V 4A1,6VD2PAKStock DE - 0Stock HK - 0Stock US - 0
  • 2000:$0.6228
  • 4000:$0.6126
  • 6000:$0.5667
Image Part # Description
STGB40H65FB

Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2

IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
STGB40V60F

Mfr.#: STGB40V60F

OMO.#: OMO-STGB40V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGB4M65DF2

Mfr.#: STGB4M65DF2

OMO.#: OMO-STGB4M65DF2-STMICROELECTRONICS

TRENCH GATE FIELD-STOP IGBT, M S
STGB40H65FB

Mfr.#: STGB40H65FB

OMO.#: OMO-STGB40H65FB-STMICROELECTRONICS

IGBT BIPO 650V 40A D2PAK
Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of STGB4M65DF2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.06
$1.06
10
$0.91
$9.10
100
$0.70
$69.90
500
$0.62
$309.00
1000
$0.49
$488.00
2000
$0.43
$866.00
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